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CSD16409Q3 fiches techniques PDF

CICLON - NexFET Power MOSFETs

Numéro de référence CSD16409Q3
Description NexFET Power MOSFETs
Fabricant CICLON 
Logo CICLON 





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CSD16409Q3 fiche technique
N-Channel
CICLON NexFETPower MOSFETs
CSD16409Q3
Features
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
RoHS Compliant
Halogen Free
QFN 3.3mm x 3.3mm Plastic Package Top View
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
4.0
1.0
VGS=4.5V
VGS=10V
2.0
9.5
6.2
V
nC
nC
m
m
V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
Continuous Drain Current, TC = 25°C
ID
Continuous Drain Current1
IDM
PD
TJ, TSTG
EAS
Pulsed Drain Current, TA = 25°C2
Power Dissipation1
Operating Junction and Storage Temperature Range
Avalanche Energy, single pulse ID =38A, L = 0.1mH, RG = 25
1. Rθja = 470C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. Pulse width 300 µs, duty cycle 2%
RDS(ON) vs. VGS
20
18 ID = 17A
16
14 TC = 125ºC
12 TC = 25ºC
10
8
6
4
2
0
2 4 6 8 10 12
VGS - Gate to Source Voltage (V)
Gate Charge
12
VDS = 12.5V
10 ID = 17A
8
6
4
2
0
02
Value
25
+16 / -12
60
15
90
2.6
-55 to 150
72
Units
V
V
A
A
A
W
°C
mJ
46
Qg - Gate Charge (nC)
8
10
Ordering Information
Type
CSD16409Q3
Package
QFN 3.3 X 3.3 Plastic Package
© 2008 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com

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