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CSD16401Q5 fiches techniques PDF

CICLON - NexFET Power MOSFETs

Numéro de référence CSD16401Q5
Description NexFET Power MOSFETs
Fabricant CICLON 
Logo CICLON 





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CSD16401Q5 fiche technique
N-Channel
CICLON NexFETPower MOSFETs
CSD16401Q5
Features
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
RoHS Compliant
Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
21
5.2
VGS=4.5V
VGS=10V
1.5
1.8
1.3
V
nC
nC
m
m
V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =100A, L = 0.1mH, RG = 25Ω
1. Rθja = 400C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. Pulse width 300 µs, duty cycle 2%
RDS(ON) vs. VGS
6.0
5.0
ID = 40A
Gate Charge
12
10
4.0 8
Value
25
+16 / -12
100
38
240
3.1
-55 to 150
500
Units
V
V
A
A
A
W
°C
mJ
3.0
2.0
1.0
0.0
0
TC = 125ºC
TC = 25ºC
2 4 6 8 10
VGS - Gate to Source Voltage (V)
12
6
4
2 VDS = 12.5V
ID = 40A
0
0 10 20 30 40 50 60
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16401Q5
Package
QFN 5X6 Plastic Package
© 2008 CICLON Semiconductor Device Corp., rev 2.5
All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com

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