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PDF K2789 Data sheet ( Hoja de datos )
| Número de pieza | K2789 | |
| Descripción | MOSFET ( Transistor ) - 2SK2789 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK2789
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2789
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 16 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V)
l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
100
100
±20
27
108
60
193
27
6
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
2.08
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 428 µH, IAR = 27 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2002-06-27
1 page  
2SK2789
RG = 25 Ω
VDD = 25 V, L = 428 µH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
÷ö
ø
5 2002-06-27
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2789.PDF ] | |
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