|
|
PDF 2N5806 Data sheet ( Hoja de datos )
| Número de pieza | 2N5806 | |
| Descripción | TRIACS | |
| Fabricantes | New Jersey Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N5806 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
J
Cx
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
2N5806 - 2N5807
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5809
MT20-
-OMT1
SILICON BIDIRECTIONAL THYRISTORS
. . . designed primarily for industrial and military applications for the
control of ac loads in applications such as light dimmers, power sup-
plies, heating controls, motor controls, welding equipment and power
switching systems; or wherever full-wave, silicon gate controlled
solid-state devices are needed.
• Glass Passivated Junctions andCenter Gate Fire
• Isolated Stud for Ease of Assembly
• Gate Triggering Guaranteed In All 4 Quadrants
MAXIMUM RATINGS
Rating
•Repetitive Peak Off-State Voltage 1 1)
(Tj--66tO+125°C)
1/2 Sine Wave SO to 60 Hz, Gate Open
•Peak Principal Voltage 2N^8l>6
2N5807
2N5809
•Peak Gate Voltage
'On-State Current RMS
(TC . -65 to+85°C)
<TC- -f100°CI
Full Sine Wave, 50 to 60 Hz
"Peak Surge Current
(One Full Cycle of surge current
at 60 Hz, proceeded and fol-
lowed by a 30 A RMScurrent,
Tj - +125°C)
Circuit Fusing Considerations
(Tj--6Sto+12S°C,
t - 1.0 to 8.3 mi)
•Peak Gate Power
(Tj = +80°C, Pulse Width -2.0 ia>
•Average Gate Power
(Tj »+80°C.t»B.3rml
•Peak Gate Current
•Operating Junction Temperature Range
•Storage Temperature Range
•Stud Torque
2N6160thru2N6165
THERMAL CHARACTERISTICS
Characteristic
•Thermal Reiistance.JunctiontoCase
Symbol
VDRM
Value
VGM
iTfRMS)
'TSM
200
600
10
30
20
250
|2t 210
POM
PG|AV)
IGM
TJ
TSW
20
0.5
2.0
-6510+125
-65 to t150
30
Symbol
HSJC _._
Max
1.0
Unit
Volts
Volts
Amp
Amp
A2s
Watts
Watt
Amp
°C
°c
in. Ib-
Unit
°C/W
TRIACS
(THYRISTORS)
30 AMPERES RMS
NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without
notice. Information furnished by Nj Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5806.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N580 | Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 2N5804 | Bipolar NPN Device |  Seme LAB |
| 2N5804 | (2N5804 / 2N5805) Silicon NPN Power Transistors |  SavantIC |
| 2N5805 | (2N5804 / 2N5805) Silicon NPN Power Transistors | SavantIC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |