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Numéro de référence | HX8N60 | ||
Description | N-Channel MOSFET | ||
Fabricant | HX | ||
Logo | |||
HX8N60
7.6 Amps,600Volts
N-Channel MOSFET
■ Description
The HX8N60 is a high voltage MOSFET and is designed to have better
characteristics, such as fast switching time, low gate charge, low on-state
resistance and have a high rugged avalanche characteristics. This power
MOSFET is usually usually used at high speed switching applications in
power supplies .PWM motor controls, high efficient DC to DC converters
and bridge circuits.
■ Features
● RDS(ON)=1.2Ω@VGS=10V
● Ultra Low gate charge(typical 28nC)
● Low reverse transfer capacitance(Crss=typical 12.0pF)
● Fast switching capability
● Avalanche energy tested
● Improved dv/dt capability,high ruggedness
■ Symbol
Power MOSFET
■ Ordering Information
Order Number
Normal
Lead Free Plating
HX8N60-TA3-T
HX8N60L-TA3-T
HX8N60-TF3-T
HX8N60L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
Package
TO-220
TO-220F
Pin Assignment
123
GD S
GD S
Packing
Tube
Tube
(1)T:Tube,R:Tape Reel
(2)TA3:TO-220,TF3:TO-220F
(3)L:Lead Free Plating Blank:Pb/Sn
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃
Tc=100℃
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
±30
7.6 7.6*
4.7 4.7*
30 30*
Avalanche Energy
Repetitive (Note 1)
Single Pulse (Note 2)
EAR
EAS
14.7
230
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
Derate above 25℃
PD
142 48
1.14 0.40
Junction Temperature
TJ +150
Storage Temperature
*Drain current limited by maximum junction temperature.
TSTG
-55~+150
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
HX 1
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Pages | Pages 5 | ||
Télécharger | [ HX8N60 ] |
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