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Numéro de référence | HX8N80 | ||
Description | N-Channel MOSFET | ||
Fabricant | CRE | ||
Logo | |||
7.8 Amps,800Volts
N-Channel MOSFET
■ Description
The HX8N80(C) N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
� RDS(ON) = 1.75 Ω@VGS = 10 V
� Low gate charge ( typical 27nC)
� High ruggedness
� Fast switching capability
� Avalanche energy specified
� Improved dv/dt capability
■ Symbol
CFF/P8N80
■ Ordering Information
Order Number
Normal
Lead Free Plating
HX8N80(C)-TA3-T
HX8N80(C)L-TA3-T
HX8N80(C)-TF3-T
HX8N80(C)L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N80(C)L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
Package
TO-220
TO-220F
Pin Assignment
123
GD S
GD S
Packing
Tube
Tube
(1)T:Tube,R:Tape Reel
(2)TA3:TO-220,TF3:TO-220F
(3)L:Lead Free Plating Blank:Pb/Sn
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
800
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃
Tc=100℃
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
7.8
4.5
26.4
±30
7.8*
4.5*
26.4*
Avalanche Energy
Repetitive (Note 1)
Single Pulse (Note 2)
EAR
EAS
6.6
580
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
Derate above 25℃
PD
167 56
1.33 0.44
Junction Temperature
TJ +150
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
1
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Pages | Pages 6 | ||
Télécharger | [ HX8N80 ] |
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