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CRE - N-Channel MOSFET

Numéro de référence HX8N80
Description N-Channel MOSFET
Fabricant CRE 
Logo CRE 





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HX8N80 fiche technique
7.8 Amps800Volts
N-Channel MOSFET
Description
The HX8N80(C) N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
Features
RDS(ON) = 1.75 Ω@VGS = 10 V
Low gate charge ( typical 27nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
Symbol
CFF/P8N80
Ordering Information
Order Number
Normal
Lead Free Plating
HX8N80(C)-TA3-T
HX8N80(C)L-TA3-T
HX8N80(C)-TF3-T
HX8N80(C)L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N80(C)L-TA3-T
1Packing Type
2Package Type
3Lead Plating
Package
TO-220
TO-220F
Pin Assignment
123
GD S
GD S
Packing
Tube
Tube
(1)T:Tube,R:Tape Reel
(2)TA3:TO-220,TF3:TO-220F
(3)L:Lead Free Plating BlankPb/Sn
Absolute Maximum Ratings(Tc=25,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
800
Gate-Source Voltage
Drain Currenet Continuous
Tc=25
Tc=100
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
7.8
4.5
26.4
±30
7.8
4.5
26.4
Avalanche Energy
Repetitive (Note 1)
Single Pulse (Note 2)
EAR
EAS
6.6
580
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25
Derate above 25
PD
167 56
1.33 0.44
Junction Temperature
TJ +150
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
1

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