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PDF HX8205 Data sheet ( Hoja de datos )
| Número de pieza | HX8205 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Husintent | |
| Logotipo |  |
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HX8205
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HX8205 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 19.5V,ID = 4A
RDS(ON) <37mΩ @ VGS=2.5V
RDS(ON) < 27mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● Battery protection
● Load switch
● Power management
D1 D2
G1 G2
S1 S2
Schematic diagram
Marking and pin Assignment
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
8205
Device
HX8205
Device Package
SOT23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
19.5
±10
4
25
1.25
-55 To 150
Unit
V
V
A
A
W
℃
HX8205 N-channel MOSFET
Rever1.0
1 www.husintent.com
1 page  
HX8205
VDS Drain-Source Voltage (V)
Figure 13: Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14: Normalized Maximum Transient Thermal Impedance
HX8205 N-channel MOSFET
Rever1.0
5 www.husintent.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HX8205.PDF ] | |
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