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PDF BS616LV2016 Data sheet ( Hoja de datos )
| Número de pieza | BS616LV2016 | |
| Descripción | Very Low Power CMOS SRAM | |
| Fabricantes | Brilliance Semiconductor | |
| Logotipo |  |
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Very Low Power CMOS SRAM
128K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV2016
n FEATURES
Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V
Ÿ Very low power consumption :
VCC = 3.0V Operation current : 30mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 0.1uA (Typ.) at 25 OC
VCC = 5.0V Operation current : 62mA (Max.) at 55ns
8mA (Max.) at 1MHz
Standby current : 0.6uA (Typ.) at 25OC
Ÿ High speed access time :
-55 55ns(Max.) at VCC=3.0~5.5V
-70 70ns(Max.) at VCC=2.7~5.5V
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.5V
n POWER CONSUMPTION
n DESCRIPTION
The BS616LV2016 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.1uA at 3.0V/25OC and maximum access time of 55ns at
3.0V/85OC.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV2016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV2016 is available in DICE form, JEDEC standard
44-pin TSOP II package and 48-ball BGA package.
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
(ICCSB1, Max)
VCC=5.0V VCC=3.0V
BS616LV2016DC
BS616LV2016EC
Commercial
+0OC to +70OC
6.0uA
0.7uA
POWER DISSIPATION
1MHz
VCC=5.0V
10MHz
Operating
(ICC, Max)
fMax.
1MHz
VCC=3.0V
10MHz
7mA 39mA 60mA 1.5mA 14mA
PKG TYPE
fMax.
29mA
DICE
TSOP II-44
BS616LV2016AI
BS616LV2016EI
Industrial
-40OC to +85OC
20uA
2.0uA
8mA
40mA 62mA
2mA
15mA
30mA
BGA-48-0608
TSOP II-44
n PIN CONFIGURATIONS
A4 1
44 A5
A3 2
43 A6
A2 3
42 A7
A1 4
41 OE
A0 5
40 UB
CE 6
39 LB
DQ0 7
38 DQ15
DQ1 8
37 DQ14
DQ2 9
36 DQ13
DQ3
VCC
10
11
BS616LV2016EC
35
34
DQ12
VSS
VSS 12 BS616LV2016EI
DQ4 13
33 VCC
32 DQ11
DQ5 14
31 DQ10
DQ6 15
30 DQ9
DQ7 16
29 DQ8
WE 17
28 NC
A16 18
27 A8
A15 19
26 A9
A14 20
25 A10
A13 21
24 A11
A12 22
23 NC
123456
A LB OE A0 A1 A2 NC
B D8 UB A3 A4 CE D0
C D9 D10 A5 A6 D1 D2
D VSS D11 NC A7 D3 VCC
E VCC D12 NC A16 D4 VSS
F D14 D13 A14 A15 D5 D6
G D15 NC A12 A13 WE D7
H NC A8 A9 A10 A11 NC
n BLOCK DIAGRAM
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
DQ0
.
.
.
.
.
.
DQ15
CE
WE
OE
UB
LB
VCC
VSS
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 2048
16
.
.
.
. 16
.
.
Control
Data
Input
Buffer
16
Data
Output
Buffer
16
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
7
Address Input Buffer
A12 A13 A14 A15 A16 A0 A1
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS66LV2016
1
Revision 1.4
Nov.
2006
1 page  
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
BS616LV2016
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tAVQX
tELQV
tBLQV
tGLQV
tELQX
tBLQX
tGLQX
tEHQZ
tBHQZ
tGHQZ
tAVQX
tRC
tAA
tACS
tBA
tOE
tCLZ
tBE
tOLZ
tCHZ
tBDO
tOHZ
tOH
DESCRIPTION
CYCLE TIME : 55ns CYCLE TIME : 70ns
(VCC=3.0~5.5V)
(VCC=2.7~5.5V)
MIN. TYP. MAX. MIN. TYP. MAX.
Read Cycle Time
55 --
-- 70 --
--
Address Access Time
-- -- 55 -- -- 70
Chip Select Access Time
(CE) --
-- 55 --
-- 70
Data Byte Control Access Time (LB, UB) --
-- 55 --
-- 70
Output Enable to Output Valid
-- -- 30 -- -- 35
Chip Select to Output Low Z
(CE) 10
--
-- 10 --
--
Data Byte Control to Output Low Z (LB, UB) 10
--
-- 10 --
--
Output Enable to Output Low Z
5 -- -- 5 -- --
Chip Select to Output High Z
(CE) --
-- 30 --
-- 35
Data Byte Control to Output High Z (LB, UB) --
-- 30 --
-- 35
Output Enable to Output High Z
-- -- 25 -- -- 30
Data Hold from Address Change
10 --
-- 10 --
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
ADDRESS
DOUT
tAA
tOH
tRC
tOH
R0201-BS616LV2016
5
Revision 1.4
Nov.
2006
5 Page 
n Revision History
Revision No. History
1.2 Add Icc1 characteristic parameter
Improve Iccsb1 spec.
I-grade from 30uA to 20uA at 5.0V
5.0uA to 2.0uA at 3.0V
C-grade from 10uA to 6.0uA at 5.0V
3.0uA to 0.7uA at 3.0V
1.3 Change I-grade operation temperature range
- from –25OC to –40OC
1.4 Add 48-ball BGA package
BS616LV2016
Draft Date
Jan. 13, 2006
Remark
May. 25, 2006
Nov. 02, 2006
R0201-BS616LV2016
11
Revision 1.4
Nov.
2006
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BS616LV2016.PDF ] | |
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