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Numéro de référence | 2SD1416 | ||
Description | Silicon NPN Darlington Power Transistor | ||
Fabricant | INCHANGE | ||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1416
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V
·Complement to Type 2SB1021
APPLICATIONS
·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
80 V
5V
IC Collector Current-Continuous
7A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
0.2 A
30 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SD1416 ] |
No | Description détaillée | Fabricant |
2SD1410 | Silicon NPN Darlington Power Transistor | INCHANGE |
2SD1410A | Silicon NPN Triple Diffused Type TRANSISTOR | Toshiba Semiconductor |
2SD1411 | SILICON POWER TRANSISTOR | SavantIC |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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