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Samsung semiconductor - 4M-Bit (512Kx8) CMOS MASK ROM

Numéro de référence KM23C4000D
Description 4M-Bit (512Kx8) CMOS MASK ROM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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KM23C4000D fiche technique
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
524,288x8 bit organization
Access time : 80ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 50mA(Max.)
Standby : 50µA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C4000D : 32-DIP-600
-. KM23C4000DG : 32-SOP-525
CMOS MASK ROM
GENERAL DESCRIPTION
The KM23C4000D(G) is a fully static mask programmable
ROM organized 524,288 x 8 bit. It is fabricated using silicon
gate CMOS process technology.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C4000D is packaged in a 32-DIP and the
KM23C4000DG in a 32-SOP.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
A18
.
.
.
.
.
.
.
.
A0
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
CE CONTROL
OE LOGIC
MEMORY CELL
MATRIX
(524,288x8)
SENSE AMP.
BUFFERS
...
Q0 Q7
Pin Name
A0 - A18
Q0 - Q7
CE
OE
VCC
VSS
N.C
Pin Function
Address Inputs
Data Outputs
Chip Enable
Output Enable
Power(+5V)
Ground
No Connection
N.C 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
Q0 13
Q1 14
Q2 15
VSS 16
DIP
&
SOP
32 VCC
31 A18
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
21 CE
21 Q7
20 Q6
19 Q5
18 Q4
17 Q3
KM23C4000D(G)

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