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MT4606 fiches techniques PDF

MT Semiconductor - N+P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence MT4606
Description N+P-Channel Enhancement Mode Field Effect Transistor
Fabricant MT Semiconductor 
Logo MT Semiconductor 





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MT4606 fiche technique
September 2008
MT4606
Dual N & P-Channel PowerTrenchMOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
MOS-TECH Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1: N-Channel
7A, 30V
RDS(on) = 0.028@ VGS = 10V
RDS(on) = 0.040@ VGS = 4.5V
Q2: P-Channel
-5A, -30V
RDS(on) = 0.052@ VGS = -10V
RDS(on) = 0.080@ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
MT4606
MT4606
13"
2008 MOS-TECH Semiconductor Corporation
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
30 30
±20 ±20
7 -5
20 -20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
MT4606 Rev B

PagesPages 12
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