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Numéro de référence | AO4606 | ||
Description | 30V Complementary MOSFET | ||
Fabricant | Alpha & Omega Semiconductors | ||
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AO4606
30V Complementary MOSFET
General Description
The AO4606 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
Product Summary
N-Channel
VDS= 30V
ID= 6A (VGS=10V)
RDS(ON)
< 30mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-30V
-6.5A (VGS=-10V)
RDS(ON)
< 28mΩ (VGS=-10V)
< 44mΩ (VGS=-4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
D2 D1
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1 G2
G1
S2 S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
6
5
30
10
5
-6.5
-5.3
-30
23
26
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
Units
62.5
°C/W
90 °C/W
40 °C/W
Rev 10: April 2012
www.aosmd.com
Page 1 of 9
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Pages | Pages 9 | ||
Télécharger | [ AO4606 ] |
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