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Numéro de référence | JS29F08G08CANB2 | ||
Description | SD74 NAND Flash Memory | ||
Fabricant | Intel | ||
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1 Page
Intel® SD74 NAND Flash Memory
JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1
Product Features
Datasheet
Single-level cell (SLC) Technology
Organization:
— Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
— Block size: 64 pages (128K + 4K bytes)
— Plane size: 2,048 blocks
— Device size: 4Gb: 4,096 blocks; 8Gb: 8,192
blocks; 16Gb: 16,384 blocks
Read performance:
— Random read: 25µs (MAX)
— Sequential read: 25ns (MIN)
Write performance:
— Page program: 220µs (TYP)
Block erase: 1.5ms (TYP)
Data Retention:
— 10 years
Endurance:
— 100,000 PROGRAM/ERASE cycles
First block (block address 00h):
— Guaranteed to be valid up to 1,000
PROGRAM/ERASE cycles
Vcc:
— 2.7V – 3.6V
Operating Temperature:
— -25 oC to 85 oC
Command set:
— Industry-standard basic NAND Flash
command set
Advanced Command Set:
— Two-plane commands
— Interleaved die operation
— READ UNIQUE ID (contact factory)
— Internal Data Move: Operations supported
within the plane from which data is read
Operation status byte:
— Provides software method for detecting:
— Operation completion
— Pass/fail condition
— Write-protect status
Ready/busy# (R/B#) signal:
— Provides a hardware method for detecting
PROGRAM or ERASE cycle completion
WP# signal:
— Write protect entire device
RESET:
— Required after power-up
Package Types:
— 48-pin TSOP Type 1
Configuration:
# of Die
1
2
4
# of CE# # of R/B#
11
22
22
I/O
Common
Common
Common
Order Number: 312774-012US
March 2007
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Pages | Pages 30 | ||
Télécharger | [ JS29F08G08CANB2 ] |
No | Description détaillée | Fabricant |
JS29F08G08CANB1 | (JS29FxxG08xANB1) SD74 NAND Flash Memory | Intel |
JS29F08G08CANB2 | SD74 NAND Flash Memory | Intel |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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