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JS29F08G08CANB2 fiches techniques PDF

Intel - SD74 NAND Flash Memory

Numéro de référence JS29F08G08CANB2
Description SD74 NAND Flash Memory
Fabricant Intel 
Logo Intel 





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JS29F08G08CANB2 fiche technique
Intel® SD74 NAND Flash Memory
JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1
Product Features
Datasheet
„ Single-level cell (SLC) Technology
„ Organization:
— Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
— Block size: 64 pages (128K + 4K bytes)
— Plane size: 2,048 blocks
— Device size: 4Gb: 4,096 blocks; 8Gb: 8,192
blocks; 16Gb: 16,384 blocks
„ Read performance:
— Random read: 25µs (MAX)
— Sequential read: 25ns (MIN)
„ Write performance:
— Page program: 220µs (TYP)
„ Block erase: 1.5ms (TYP)
„ Data Retention:
— 10 years
„ Endurance:
— 100,000 PROGRAM/ERASE cycles
„ First block (block address 00h):
— Guaranteed to be valid up to 1,000
PROGRAM/ERASE cycles
„ Vcc:
— 2.7V – 3.6V
„ Operating Temperature:
— -25 oC to 85 oC
„ Command set:
— Industry-standard basic NAND Flash
command set
„ Advanced Command Set:
— Two-plane commands
— Interleaved die operation
— READ UNIQUE ID (contact factory)
— Internal Data Move: Operations supported
within the plane from which data is read
„ Operation status byte:
— Provides software method for detecting:
— Operation completion
— Pass/fail condition
— Write-protect status
„ Ready/busy# (R/B#) signal:
— Provides a hardware method for detecting
PROGRAM or ERASE cycle completion
„ WP# signal:
— Write protect entire device
„ RESET:
— Required after power-up
„ Package Types:
— 48-pin TSOP Type 1
„ Configuration:
# of Die
1
2
4
# of CE# # of R/B#
11
22
22
I/O
Common
Common
Common
Order Number: 312774-012US
March 2007

PagesPages 30
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