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Número de pieza | AH920 | |
Descripción | HIGH SENSITIVITY CMOS HALL-EFFECT LATCH | |
Fabricantes | BCD | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AH920 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
AH920
General Description
The AH920 is a Hall-effect latch designed in mixed
signal CMOS technology. It is quite suitable for use
in automotive, industrial and consumer applications.
Superior high-temperature performance is made
possible through dynamic offset cancellation, which
reduces the residual offset voltage normally caused
by device over-molding, temperature dependencies,
and thermal stress. The device integrates a voltage
regulator, Hall-voltage generator, small-signal
amplifier, chopper stabilization, schmitt trigger, and
open-drain output.
An on-board regulator permits operation with supply
voltage from 3.5V to 20V.
The AH920 is available in TO-92S-3 and SOT-23-3
packages, which are optimized for most applications.
Features
• Wide Operating Voltage Range from 3.5 to 20V
• Symmetrical Switch Points
• Chopper-stabilized Amplifier Stage
• Superior Temperature Stability
• Open-drain Output
• Compact Size
• ESD Rating: 6000V (Human Body Model)
Applications
• Brushless DC Motor Commutation
• Brushless DC Fan
• Solid-state Switch
• Revolution Counting
• Speed Detection
• High Sensitivity and Unconnected Switch
TO-92S-3
SOT-23-3
Figure 1. Package Types of AH920
Nov. 2010 Rev. 1.3
BCD Semiconductor Manufacturing Limited
1
1 page Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
AH920
Electrical Characteristics
VCC =12V, TA=25°C, unless otherwise specified.
Parameter
Supply Voltage
Supply Current
Saturation Voltage
Output Leakage Current
Output Rising Time
Output Falling Time
Symbol Conditions Min
VCC Operating
3.5
VCC=12V, B<BRP
ICC
VCC=12V, B>BOP
VSAT IOUT=20mA, B>BOP
ILEAKAGE VOUT=20V, B<BRP
tRISING
tFALLING
RL=1kΩ,CL=20pF
RL=1kΩ,CL=20pF
Typ
12
3.0
3.0
185
0.1
0.4
0.4
Max
20
5.0
5.0
500
10
2
2
Unit
V
mA
mA
mV
µA
µs
µs
Magnetic Characteristics
VCC =12V, TA=25°C, unless otherwise specified.
Parameter
Operating Point
Releasing Point
Hysteresis
Symbol Min Typ Max Unit
BOP 5 22 40 Gauss
BRP
-40 -22
-5 Gauss
BHYS
45 Gauss
Nov. 2010 Rev. 1.3
Figure 4. Magnetic Flux Density of AH920
BCD Semiconductor Manufacturing Limited
5
5 Page HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
Typical Performance Characteristics (Continued)
Data Sheet
AH920
450
400
350
300
250
200
150
100
50
0
0
SOT-23-3
TO-92S-3
25 50 75 100 125 150
T (OC)
A
Figure 17. PD vs. TA
Typical Application
Output
RL
VCC
Nov. 2010 Rev. 1.3
CL
0.1 F
Figure 18. Typical Application Circuit of AH920
BCD Semiconductor Manufacturing Limited
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet AH920.PDF ] |
Número de pieza | Descripción | Fabricantes |
AH920 | HIGH SENSITIVITY CMOS HALL-EFFECT LATCH | BCD |
AH920 | HIGH SENSITIVITY CMOS HALL-EFFECT LATCH | Diodes |
AH921 | HIGH SENSITIVITY CMOS HALL-EFFECT LATCH | BCD |
AH922 | UNIPOLAR HALL-EFFECT SWITCH | BCD |
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