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PDF MS1076 Data sheet ( Hoja de datos )
| Número de pieza | MS1076 | |
| Descripción | RF & MICROWAVE TRANSISTORS | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MS1076 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 28 VOLTS
• GOLD METALLIZATION
• POUT = 220 W PEP
• GP = 12 dB GAIN MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor
designed primarily for SSB and VHF communications. This
device utilizes an emitter ballasted die geometry for maximum
ruggedness and reliability.
MS1076
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
Rev A: October 2009
Value
70
35
4.0
16
250
+200
- 65 to +150
0.7
Unit
V
V
V
A
W
°C
°C
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
1 page  
BIAS CIRCUIT
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MS1076.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MS1076 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |  Advanced Power Technology |
| MS1076 | RF & MICROWAVE TRANSISTORS | Microsemi |
| MS1077 | RF & MICROWAVE TRANSISTORS |  Microsemi Corporation |
| MS1078 | RF & MICROWAVE TRANSISTORS | Microsemi Corporation |
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