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IRFR3711Z fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFR3711Z
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFR3711Z fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
VDSS
20V
PD - 94651B
IRFR3711Z
IRFU3711Z
HEXFET® Power MOSFET
RDS(on) max Qg
5.7m:
18nC
D-Pak
IRFR3711Z
I-Pak
IRFU3711Z
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
Max.
20
± 20
93f
66f
370
79
39
0.53
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
3/2/04

PagesPages 11
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