|
|
PDF IRFP450 Data sheet ( Hoja de datos )
| Número de pieza | IRFP450 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
1. IRFP450  Hay una vista previa y un enlace de descarga de IRFP450 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Data Sheet
January 2002
IRFP450
14A, 500V, 0.400 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17435.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP450
TO-247
IRFP450
NOTE: When ordering, use the entire part number.
Features
• 14A, 500V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
©2002 Fairchild Semiconductor Corporation
IRFP450 Rev. B
1 page  
IRFP450
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10000
8000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
6000
4000
2000
CISS
COSS
CRSS
0
12
5 10
2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
16
TJ = 25oC
12
TJ = 150oC
8
4
0
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
PULSE DURATION = 80µs
5 DUTY CYCLE = 0.5% MAX
2
10
5
2 TJ = 150oC
1
5
TJ = 25oC
2
0.1
0
0.5 1.0 1.5 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 14A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
0 0 25 50 75 100 125
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFP450 Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP450.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFP450 | N-Channel MOSFET Transistor |  Inchange Semiconductor |
| IRFP450 | Diode ( Rectifier ) |  American Microsemiconductor |
| IRFP450 | Power MOSFET ( Transistor ) |  International Rectifier |
| IRFP450 | N-Channel Power MOSFET / Transistor |  Intersil Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |