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PDF K3298 Data sheet ( Hoja de datos )
| Número de pieza | K3298 | |
| Descripción | MOSFET ( Transistor ) - 2SK3298 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
FEATURES
•Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
600
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±7.5 A
±30 A
Total Power Dissipation (TA = 25°C) PT1
2.0 W
Total Power Dissipation (TC = 25°C) PT2
40 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
7.5 A
37.5 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000
1 page  
2SK3298
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
10
1
TC
RDS(on) Limited
= 25˚C
ID(DC)
30 ms
Power
PW
100µs =10µs
10
3 m1sms
ms
Dissip1a0tio0nmLsimited
Single Pulse
0.1
1 10 100
1000
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
10 µ
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
Rth(ch-A) = 62.5 ˚C/W
Rth(ch-C) = 3.13 ˚C/W
Single Pulse
10 100 1000
Data Sheet D14059EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3298.PDF ] | |
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