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Toshiba - PNP Transistor - 2SA2069

Numéro de référence A2069
Description PNP Transistor - 2SA2069
Fabricant Toshiba 
Logo Toshiba 





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A2069 fiche technique
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2069
High-Speed Switching Applications
DC-DC Converter Applications
2SA2069
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.15 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
High-speed switching: tf = 37 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
t = 10 s
DC
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
(Note 1)
Tj
Tstg
20
20
7
1.5
2.5
150
2.0
1.0
150
55 to 150
V
V
V
A
mA
W
°C
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2006-11-09

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