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PDF SSFP4N90 Data sheet ( Hoja de datos )
| Número de pieza | SSFP4N90 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Good-Ark | |
| Logotipo |  |
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SSFP4N90
StarMOST Power MOSFET
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in
Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Application
■ Switching application
VDSS = 900V
ID25 = 4A
RDS(ON) = 4.2Ω
Pin1–Gate
Pin2–Drain
Pin1–Source
Absolute Maximum Ratings
ID@Tc=25ْ C
ID@Tc=100ْC
Parameter
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ①
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy ②
IAR Avalanche Current ①
EAR Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
4
2.3
16
140
1.12
±30
170
2.2
8.5
4.0
–55 to +150
300(1.6mm from case)
10 Ibf●in(1.1N●m)
Units
A
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
— — 0.89
RθCS
Case-to-Sink,Flat,Greased Surface
—
0.5
－
RθJA Junction-to-Ambient
— — 62.5
Units
ْC/W
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SSFP4N90.PDF ] | |
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