SSFP6N70 Datasheet PDF - Good-Ark
| Part Number | SSFP6N70 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | Good-Ark | |
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SSFP6N70
StarMOST Power MOSFET
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in
Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Application
■ Switching application
VDSS = 700V
ID25 = 6.5A
RDS(ON) = 1.4Ω
Pin1–Gate
Pin2–Drain
Pin1–Source
Absolute Maximum Ratings
ID@Tc=25ْ C
ID@Tc=100ْC
Parameter
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ①
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy ②
IAR Avalanche Current ①
EAR Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
6.5
4.2
28
150
1.1
±30
600
6.5
15.5
4.8
–55 to +175
300(1.6mm from case)
10 Ibf●in(1.1N●m)
Units
A
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
— — 0.9
RθCS
Case-to-Sink,Flat,Greased Surface
—
— 0.50
RθJA Junction-to-Ambient
— — 62
Units
ْC/W
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SSFP6N70 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SSFP6N70.PDF Datasheet ] | |
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