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Good-Ark - Power MOSFET ( Transistor )

Numéro de référence SSFP9N80
Description Power MOSFET ( Transistor )
Fabricant Good-Ark 
Logo Good-Ark 





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SSFP9N80 fiche technique
SSFP9N80
StarMOST Power MOSFET
Extremely high dv/dt capability
Low Gate Charge Qg results in
Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Application
Switching application
VDSS = 800V
ID25 = 7.5A
RDS(ON) = 1.2Ω
Pin1–Gate
Pin2–Drain
Pin1–Source
Absolute Maximum Ratings
ID@Tc=25ْ C
ID@Tc=100ْC
Parameter
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
7.5
4.7
30
150
1.2
±20
7.5
350
4.5
55 to +150
300(1.6mm from case)
10 Ibfin(1.1Nm)
Units
A
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
— — 0.83
RθCS
Case-to-Sink,Flat,Greased Surface
0.5
RθJA Junction-to-Ambient
— — 62.5
Units
ْC/W
1

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