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FGA50S110P fiches techniques PDF

Fairchild Semiconductor - 50A Shorted-anode IGBT

Numéro de référence FGA50S110P
Description 50A Shorted-anode IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGA50S110P fiche technique
FGA50S110P
1100 V, 50 A Shorted-anode IGBT
August 2013
Features
• Intrinsic Anti-parallel Diode for Soft-switching Applications
• High Switching Frequency Range 10 kHz to 50kHz
• High Temperature Stable Behavior (Tjmax = 175oC)
• Low Saturation Voltage Drop : VCE(sat) = 2.06 V @ IC = 50 A
• Robust Pot Detection Noise Immunity
• RoHS Compliant (Pb-free lead plating)
Applications
• Induction Cooker, Rice-jar, and Microwave Oven
• Soft-switching Applications
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for switching applications.
This device is tailored to induction cooker and microwave oven.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Notes:
1: Limited by Tjmax
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
G
E
Ratings
1100
± 25
50
30
120
50
30
300
150
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2013 Fairchild Semiconductor Corporation
FGA50S110P Rev. C1
1
www.fairchildsemi.com

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