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NXP Semiconductors - Wideband silicon low-noise amplifier MMIC

Numéro de référence BGU6101
Description Wideband silicon low-noise amplifier MMIC
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BGU6101 fiche technique
BGU6101
Wideband silicon low-noise amplifier MMIC
Rev. 2 — 3 February 2012
Product data sheet
1. Product profile
1.1 General description
The BGU6101 MMIC is an unmatched wideband MMIC featuring an integrated bias,
enable function and wide supply voltage. BGU6101 is part of a family of three products
(BGU6101, BGU6102 and BGU6104) and is optimized for 1 mA operation.
1.2 Features and benefits
Supply voltage range from 1.5 V to 5 V
Current range up to 10 mA at 3 V and 20 mA at 5 V supply voltage
NFmin of 0.8 dB
Applicable between 40 MHz and 4 GHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 6 A
ESD protection on all pins up to 3 kV HBM
Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm
1.3 Applications
FM radio
Mobile TV, CMMB
ISM
Wireless security
RKE, TPMS
AMR, ZigBee, Bluetooth
WiFi, WLAN (2.4 GHz)
Low current applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE 1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
s212
insertion power gain
f = 450 MHz
f = 900 MHz
- 13.0 -
- 12.0 -
dB
dB
NFmin minimum noise figure
f = 2400 MHz; ICC(tot) = 3 mA
f = 450 MHz
f = 900 MHz
- 13.0 -
- 0.8 -
- 0.8 -
dB
dB
dB
f = 2400 MHz; ICC(tot) = 3 mA
- 1.3 -
dB

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