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IPG20N10S4L-22 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPG20N10S4L-22
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPG20N10S4L-22 fiche technique
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N10S4L-22
Product Summary
VDS
RDS(on),max4)
ID
100 V
22 mΩ
20 A
PG-TDSON-8-4
Type
IPG20N10S4L-22
Package
Marking
PG-TDSON-8-4 4N10L22
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
one channel active
I D,pulse -
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
E AS
I AS
V GS
I D=10A
-
-
Power dissipation
one channel active
P tot T C=25°C
Operating and storage temperature T j, T stg -
Value
20
20
80
130
15
±16
60
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2013-01-30

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