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PDF IPG20N10S4L-35A Data sheet ( Hoja de datos )
| Número de pieza | IPG20N10S4L-35A | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPG20N10S4L-35A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPG20N10S4L-35A
Product Summary
VDS
RDS(on),max4)
ID
100 V
35 mΩ
20 A
PG-TDSON-8-10
Type
IPG20N10S4L-35A
Package
PG-TDSON-8-10
Marking
4N10L35
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2)
one channel active
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V2)
I D,pulse -
E AS
I AS
V GS
I D=10A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
17
80
60
15
±16
43
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-03-04
1 page  
IPG20N10S4L-35A
5 Typ. output characteristics5)
I D=f(V DS); T j=25°C
parameter: V GS
80
10 V
60
40
20
6 Typ. drain-source on-state resistance5)
R DS(on)=f(I D); T j=25°C
parameter: V GS
90
3.5 V
4V
4.5 V
5V
80
4.5 V
70
60
4V
3.5 V
50
40
30
5V
10 V
0 20
012345
0
VDS [V]
20 40 60
ID [A]
80
7 Typ. transfer characteristics5)
I D=f(V GS); V DS=6V
parameter: T j
8 Typ. drain-source on-state resistance5)
R DS(on)=f(T j); I D=17A; V GS=10V
80 65
60
40
20
0
1
Rev. 1.0
55
45
35
175 °C
25 °C
-55 °C
234
VGS [V]
25
5 15
-60 -20 20 60 100 140 180
Tj [°C]
page 5
2013-03-04
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPG20N10S4L-35A.PDF ] | |
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