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IPG16N10S4-61 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPG16N10S4-61
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPG16N10S4-61 fiche technique
IPG16N10S4-61
OptiMOS-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R
3)
DS(on),max
ID
100 V
61 mW
16 A
PG-TDSON-8-4
Type
IPG16N10S4-61
Package
Marking
PG-TDSON-8-4 4N1061
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V
Pulsed drain current1)
one channel active
Avalanche energy, single pulse1, 3)
Avalanche current, single pulse3)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V1)
I D,pulse -
E AS
I AS
V GS
I D=8A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
16
11
64
33
10
±20
29
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2011-11-29

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