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Numéro de référence | IPG16N10S4-61 | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
IPG16N10S4-61
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R
3)
DS(on),max
ID
100 V
61 mW
16 A
PG-TDSON-8-4
Type
IPG16N10S4-61
Package
Marking
PG-TDSON-8-4 4N1061
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V
Pulsed drain current1)
one channel active
Avalanche energy, single pulse1, 3)
Avalanche current, single pulse3)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V1)
I D,pulse -
E AS
I AS
V GS
I D=8A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
16
11
64
33
10
±20
29
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2011-11-29
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Pages | Pages 9 | ||
Télécharger | [ IPG16N10S4-61 ] |
No | Description détaillée | Fabricant |
IPG16N10S4-61 | Power-Transistor | Infineon Technologies |
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