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PDF BSS214NW Data sheet ( Hoja de datos )
| Número de pieza | BSS214NW | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS214NW (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSS214NW
Product Summary
V DS
R DS(on),max
ID
V GS=4.5 V
V GS=2.5 V
20 V
140 mΩ
250
1.5 A
PG-SOT323
3
1
2
Type
Package Tape and Reel Information
BSS214NW PG-SOT323 H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Marking
X5s
Avalanche energy, single pulse
E AS I D=1.5 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=1.5 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation1)
Operating and storage temperature
ESD Class
V GS
P tot T A=25 °C
T j, T stg
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
Lead Free
Yes
Packing
Non dry
Value
1.5
1.2
6
3.7
6
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.2
page 1
2011-07-13
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
8
3.5 V
6
4.5 V
3V
4
2.5 V
2 2.3 V
2V
1.8 V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
BSS214NW
240 2.2 V
200
160
120
80
2.5 V
3V
3.5 V
4.5 V
6V
40
0
3 0123456
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
1.5 10
8
1
6
0.5
150 °C
25 °C
4
2
Rev 2.2
0
0
12
V GS [V]
0
30
page 5
246
I D [A]
8
2011-07-13
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSS214NW.PDF ] | |
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