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Numéro de référence | FDMQ86530L | ||
Description | N-Channel PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FDMQ86530L
N-Channel PowerTrench® MOSFET
60 V, 8 A, 17.5 mΩ
August 2012
Features
General Description
Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A
Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A
Substantial efficiency benefit in PD solutions
This quad MOSFET solution provides ten-fold improvement in
power dissipation over diode bridge.
Application
RoHS Compliant
Active bridge
Top Bottom
G4
D1/D4
D3/S4
G3
S3
S3
D1/D4
D3/ S1/
S4 D2
Pin 1
G1
D1/D4
S1/D2
G2
S2
S2
G1
D1/D4
S1/D2
G2
S2
MLP 4.5x5
S2
Q1 Q4
Q2 Q3
G4
D1/D4
D3/S4
G3
S3
S3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
60
±20
8
8
50
22
1.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
135
°C/W
Device Marking
FDMQ86530L
Device
FDMQ86530L
Package
MLP 4.5x5
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMQ86530L Rev. C
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ FDMQ86530L ] |
No | Description détaillée | Fabricant |
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