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Infineon Technologies - Small-Signal-Transistor

Numéro de référence BSS225
Description Small-Signal-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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BSS225 fiche technique
Type
SIPMOS® Small-Signal-Transistor
Feature
• n-channel
• enhancement mode
• Logic level
• dv /dt rated
• Qualified according to AEC Q101
Halogen­free according to IEC61249­2­21
Product Summary
V DS 1)
R DS(on),max
ID
BSS225
600 V
45 Ω
0.09 A
SOT89
Type
BSS225
Package
SOT89
Pb-free
Yes
Tape and Reel Information
H6327: 3000PCS/reel
Marking
KD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ID
I D,pulse
dv /dt
V GS
T A=25 °C
T A=70 °C
T A=25 °C
I D=0.09 A,
V DS=480 V,
di /dt =200 A/µs,
T j,max=150 °C
0.09
0.073
0.36
6
±20
ESD Class
JESD22­A114­HBM                                                                                                   Class 1a
Power dissipation
P tot T A=25 °C
1.00
Operating and storage temperature T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.28
page 1
2015-02-23

PagesPages 9
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