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PDF BSS127 Data sheet ( Hoja de datos )
| Número de pieza | BSS127 | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS127 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Type
SIPMOS® Small-Signal-Transistor
Features
• n-channel
• enhancement mode
• Logic level (4.5V rated)
• dv /dt rated
• 100%lead-free; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
BSS127
600 V
500 Ω
0.021 A
PG-SOT-23
Type
BSS127
Package Pb-free
PG-SOT-23 Yes
Halogen-free Tape and Reel Information
Yes H6327: 3000PCS/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T A=25 °C
T A=70 °C
Pulsed drain current
I D,pulse T A=25 °C
Reverse diode dv /dt
dv /dt
I D=0.021 A,
V DS=480 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
ESD class (JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
P tot T A=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.021
0.017
0.09
6
±20
0 (<250)
0.50
-55 ... 150
55/150/56
Marking
SIs
Unit
A
kV/µs
V
W
°C
Rev. 2.01
page 1
2010-05-07
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
0.03
0.025
0.02
0.015
0.01
0.005
0
0246
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
10 V
5V
4V
3.8 V
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
1000
2.6 V
3V
800
3.2 V
4V
3.6 V
BSS127
3.8 V
600
3.6 V
3.2 V
3V
400
200
5V
10 V
2.6 V
8 10
0
0 0.005 0.01 0.015 0.02 0.025
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
0.025
0.025
0.02 0.02
0.015
0.015
0.01 0.01
0.005
0.005
0
0
Rev. 2.01
123
V GS [V]
0
4 0.000
page 5
0.005
0.010
I D [A]
0.015
0.020
2010-05-07
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSS127.PDF ] | |
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