|
|
PDF ITS4200S-ME-N Data sheet ( Hoja de datos )
| Número de pieza | ITS4200S-ME-N | |
| Descripción | Smart High-Side NMOS-Power Switch | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ITS4200S-ME-N (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
|
No Preview Available !
ITS4200S-ME-N
Smart High-Side NMOS-Power Switch
Data Sheet
Rev 1.0, 2012-09-01
Standard Power
1 page  
4 General Product Characteristics
ITS4200S-ME-N
General Product Characteristics
4.1 Absolute Maximum Ratings
Table 1
Absolute maximum ratings 2) at Tj = 25°C unless otherwise specified. Currents flowing into the
device unless otherwise specified in chapter “Block Diagram and Terms”
Parameter
Symbol
Min.
Values
Typ. Max.
Unit Note /
Number
Test Condition
Supply voltage VS
Voltage
Output stage OUT
VS – – 40 V
4.1.1
Output Current; (Short circuit
current see electrical
characteristics)
IOUT
self
limited
A
4.1.2
Input IN
Voltage
Current
Temperatures
VIN
-5 –
VS V
IIN -5 – 5 mA
4.1.3
4.1.4
Junction Temperature
Storage Temperature
Power dissipation
Tj
-40 –
125 °C
Tstg
-55 –
125 °C
4.1.5
4.1.6
Ta = 25 °C1)
P tot – – 1.4 W
Inductive load switch-off energy dissipation
4.1.7
Tj = 125 °C; VS=13.5V; IL= 0.5A2) EAS
ESD Susceptibility
–
–
500 mJ single pulse
4.1.8
ESD susceptibility (input pin)
ESD susceptibility (all other pins)
VESD
VESD
-1 – 1 kV HBM3)
-2 – 2 kV HBM3)
4.1.9
4.1.10
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70mm thick) copper area for Vbb connection. PCB
is vertical without blown air
2) Not subject to production test, specified by design
3) ESD susceptibility HBM according to EIA/JESD 22-A 114.
Note: Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” the normal operating range. Protection functions
are neither designed for continuous nor repetitive operation.
Data Sheet
5 Rev 1.0, 2012-09-01
5 Page 
ITS4200S-ME-N
Typical Performance Characteristics
Standby Current ISSTB versus
Junction Temperature Tj
Typical Performance Graphs
Operating Current IGND versus
Junction Temperature Tj
8 0.8
7 0.7
6 0.6
5 0.5
4 0.4
3 0.3
2 0.2
1
Vs=13.5V;IL=150mA
0
−40 −25 0 25 50 75 100 125
Tj [°C]
Initial Peak Short Circuit Current Limt ILSCP versus
Junction Temperature Tj
0.1
Vs=13.5V;VIN=5V
0
−40 −25 0 25 50 75 100 125
Tj [°C]
Typical Overload Current waveform; no heatsink;
parameter: Start Temperature Tj-start
1.4
1.2
1
0.8
0.6
0.4
0.2
Vs=13.5V
0
−40 −25 0 25 50 75 100 125
Tj [°C]
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Tj=−40°C
Tj=25°C
Tj=125°C
100 200 300
t[ms]
400
Data Sheet
11 Rev 1.0, 2012-09-01
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet ITS4200S-ME-N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ITS4200S-ME-N | Smart High-Side NMOS-Power Switch | Infineon |
| ITS4200S-ME-O | Smart High-Side NMOS-Power Switch | Infineon |
| ITS4200S-ME-P | Smart High-Side NMOS-Power Switch | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |