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PDF BTS50055-1TMC Data sheet ( Hoja de datos )
| Número de pieza | BTS50055-1TMC | |
| Descripción | Smart Highside High Current Power Switch | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Data Sheet BTS50055-1TMC
Smart Highside High Current Power Switch
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
• Green product (RoHS compliant)
• AEC qualified
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(on)
RON
IL(nom)
IL(ISO)
IL(SC)
IL : IIS
PG-TO220-7-4
7
Application
• Power switch with current sense diagnostic
1
SM D
feedback for 12 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
5.0 ... 34 V
6.0 mΩ
17 A
70 A
130 A
14 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
Page 1of 17
2010-April-27
1 page  
Data Sheet BTS50055-1TMC
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
Unit
min typ max
Protection Functions16)
Short circuit current limit (Tab to pins 1,2,6,7)17)
VON = 6 V
Tc =-40°C:
Tc =25°C:
Tc =+150°C:
Output clamp 18)
(inductive load switch off)
IL= 40 mA:
see diagram Ind. and overvolt. output clamp page 7
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage),IL= 40 mA
Thermal overload trip temperature
Thermal hysteresis
IL(SC)
IL(SC)
IL(SC)
-VOUT(CL)
VON(CL)
Tjt
∆Tjt
-- 110 --
45 130 180
-- 115 --
14 17 20
A
V
39 42 47 V
150 -- -- °C
-- 10
-- K
Reverse Battery
Reverse battery voltage 19)
On-state resistance (Pins 1,2,6,7 to pin 4)
Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 kΩ
Integrated resistor in Vbb line
Tj = 25°C:
Tj = 150°C:
-Vbb
RON(rev)
Rbb
-- -- 32 V
-- 5.4 7.0 mΩ
8.9 12.3
-- 120
-- Ω
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,
VON < 1.5 V20),
VIS <VOUT - 5V,
VbIN > 4.0 V
see diagram on page 11
IL = 90 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
kILIS
12 400 14 200 16 000
12 000 13 700 15 400
11 400 12 800 14 200
12 200 14 800 17 400
12 000 14 100 16 200
11 500 13 200 15 000
11 100 15 300 19 500
11 500 14 500 17 500
11 400 13 300 15 200
10 000 17 600 28 500
11 000 15 600 22 000
10 600 13 800 18 000
16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit. The
lifetime will be reduced under such conditions.
18) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
19) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 8.
20) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
Page 5 of 17
2010-April-27
5 Page 
Data Sheet BTS50055-1TMC
Characteristics
Current sense versus load current:
IIS = f(IL), TJ= -40 ... +150 °C
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000
10000
0
max
typ
min
20 40
60
IIS [mA]
Current sense ratio:
KILIS = f(IL),TJ = -40°C
kilis
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000
10000
0
max
typ
min
20 40 60
Current sense ratio:
IIS = f(IL), TJ= 25 °C
22000
20000
18000
16000
14000
12000
max
typ
min
10000
80 0 20
IL [A]
kILIS
Current sense ratio:
KILIS = f(IL),TJ = 150°C
kilis
40
22000
60
20000
18000
80
IL [A]
16000
14000
12000
10000
0
max
typ
min
20 40 60
80
IL [A]
80
IL [A]
Infineon Technologies AG
Page 11 of 17
2010-April-27
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BTS50055-1TMC.PDF ] | |
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