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PDF BTM7755G Data sheet ( Hoja de datos )
| Número de pieza | BTM7755G | |
| Descripción | High Current H-Bridge Trilith IC 3G | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Data Sheet, Rev. 2.0, May 2010
BTM7755G
High Current H-Bridge
Trilith IC 3G
Automotive Power
1 page  
4 Pin Configuration
4.1 Pin Assignment
High Current H-Bridge
BTM7755G
Pin Configuration
OUT1
OUT1
OUT1
OUT1
GND
GND
GND
GND
IN1
IN2
VS
VS
VS
VS
OUT2
OUT2
OUT2
OUT2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36 OUT1
35 OUT1
34 OUT1
33 OUT1
32 VS
31 VS
30 VS
29 VS
28 ST
27 INH
26 GND
25 GND
24 GND
23 GND
22 OUT2
21 OUT2
20 OUT2
19 OUT2
Figure 3 Pin Configuration BTM7755G
4.2 Pin Definitions and Functions
Pins written in bold type need power wiring.
Pin
1..4, 33..36
5..8, 23..26
9
10
11..14, 29..32
15..22
27
28
Symbol
OUT1
GND
IN1
IN2
VS
OUT2
INH
ST
Function
Output of first half bridge
Ground
Input of first half bridge
Input of second half bridge
Supply, all pins to be connected and shorted externally
Output of second half bridge
Inhibit pin, to set device in sleep/stand-by mode
Status signal, open drain output
Data Sheet
5 Rev. 2.0, 2010-05-28
5 Page 
High Current H-Bridge
BTM7755G
Block Description and Characteristics
6.2.1
Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos. Parameter
Symbol Limit Values
Unit Test Conditions
Min. Typ. Max.
High Side Switch - Static Characteristics
6.2.1 On state high side resistance RON(HS)
6.2.2 Leakage current high side IL(LKHS)
6.2.3
Reverse diode
VDS(HS)
forward-voltage high side 2)
Low Side Switch - Static Characteristics
–
–
–
–
–
–
–
mΩ IOUT = 1 A
VS = 13.5 V
60 –
Tj = 25 °C; 1)
85 115
Tj = 150 °C
µA VINH = VIN1 = VIN2 = 0 V
VOUT = 0 V
–1
Tj < 85 °C; 1)
–5
Tj = 150 °C
V
0.9 –
0.8 –
0.6 0.8
IOUT = -1 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
6.2.4 On state low side resistance RON(LS)
–
–
mΩ IOUT = -1 A
VS = 13.5 V
90 –
Tj = 25 °C; 1)
150 180
Tj = 150 °C
6.2.5 Leakage current low side
-IL(LKLS)
µA VINH = VIN1 = VIN2 = 0 V
VOUT = VS
––1
Tj < 85 °C; 1)
––3
Tj = 150 °C
6.2.6
Reverse diode
forward-voltage low side 2)
VSD(LS)
1) Not subject to production test, specified by design.
–
–
–
V
0.9 –
0.8 –
0.6 0.8
IOUT = 1 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
2) Due to active freewheeling diode is conducting only until related switch is on
Data Sheet
11 Rev. 2.0, 2010-05-28
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet BTM7755G.PDF ] | |
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