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PDF HFP640 Data sheet ( Hoja de datos )
| Número de pieza | HFP640 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Shantou Huashan | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HFP640 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom,Industrial and Consumer Environment
TO-220
█ Features
1- G 2-D 3-S
• 18A,200V,RDS(on) <0.18Ω@VGS =10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF640
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ---------------------------------------------------------- 200V
VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 200V
VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V
ID —— Drain Current (Continuous) ------------------------------------------------------------------- 18A
PD —— Maximum Power Dissipation ------------------------------------------------------------- 125W
IAR —— Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A
EAS—— Single Pulse Avalanche Energy
(starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------- 320mJ
EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.0
Max 62.5
Typ 0.5
Unit
℃/W
℃/W
℃/W
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP640
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFP640.PDF ] | |
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