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SemiHow - 400V N-Channel MOSFET

Numéro de référence HFU6N40S
Description 400V N-Channel MOSFET
Fabricant SemiHow 
Logo SemiHow 





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HFU6N40S fiche technique
July 2009
HFD6N40S / HFU6N40S
400V N-Channel MOSFET
BVDSS = 400 V
RDS(on) typ = 0.83 Ω
ID = 4.5 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 16 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.83 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD6N40S
1
2
3
HFU6N40S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
4.5
2.7
18
±30
280
4.5
4.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
48
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.6
50
110
Units
℃/W
SEMIHOW REV.A0,July 2009

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