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Numéro de référence | HFW5N50S | ||
Description | N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
June 2009
HFW5N50S / HFI5N50S
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ = 1.2 Ω
ID = 5.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 15.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
HFW5N50S HFI5N50S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
5.0
2.9
20
±30
300
5.0
7.3
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
73
0.58
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.71
40
62.5
Units
℃/W
◎ SEMIHOW REV.A0 June 2009
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Pages | Pages 8 | ||
Télécharger | [ HFW5N50S ] |
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