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Numéro de référence | HFS12N60S | ||
Description | N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
Nov 2007
HFS12N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 0.53 ȍ
ID = 12 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 38 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.53 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
12*
7.4*
48*
ρ30
870
12
22.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
51
0.41
-55 to +150
300
*Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
--
--
Max.
2.43
--
62.5
Units
/W
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
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Pages | Pages 7 | ||
Télécharger | [ HFS12N60S ] |
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