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Número de pieza | HFG1N80 | |
Descripción | N-Channel MOSFET | |
Fabricantes | SemiHow | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFG1N80 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! HFG1N80
800V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
Preliminary
Aug 2008
BVDSS = 800 V
RDS(on) typ = 13 Ω
ID = 1.0 A
TO-92L
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
1.0
0.63
4.0
±30
90
1.0
4.5
4.0
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
◎ SEMIHOW REV.A0,Aug 2008
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet HFG1N80.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFG1N80 | N-Channel MOSFET | SemiHow |
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