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SemiHow - N-Channel MOSFET

Numéro de référence HFD1N80
Description N-Channel MOSFET
Fabricant SemiHow 
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HFD1N80 fiche technique
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 13 Ω
ID = 1.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N80
1
2
3
3
HFU1N80
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
1.0
0.63
4.0
±30
90
1.0
4.5
4.0
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
SEMIHOW REV.A0,April 2006
Downloaded from Elcodis.com electronic components distributor

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