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C3011 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SC3011

شماره قطعه C3011
شرح مفصل 2SC3011
تولید کننده Toshiba 
آرم Toshiba 


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C3011 شرح
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3011
2SC3011
UHF~C Band Low Noise Amplifier Applications
Unit: mm
· High gain: |S21e|2 = 12dB (typ.)
· Low noise figure: NF = 2.3dB (typ.), f = 1 GHz
· High fT: fT = 6.5 GHz
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Rating
20
7
3
30
10
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
fT
ïS21eï2
NF
Test Condition
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA, f = 1 GHz
VCE = 5 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
¾ 6.5 ¾ GHz
¾ 12 ¾ dB
¾ 2.3 ¾ dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collecter-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collecter output capacitance
Reverse transfer capacitance
Input capacitance
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
Cob
Cre
Cib
VCB = 10 V, IE = 0
VEB = 1.0 V, IC = 0
IC = 0.5 mA, IB = 0
VCE = 5 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
VCB = 5 V, IE = 0, f = 1 MHz
VEB = 0, IC = 0, f = 1 MHz
Note: Cre is measured by 3-terminal method with capacitance bridge.
Min Typ. Max Unit
¾ ¾ 1.0
¾ ¾ 1.0
7 ¾¾
30 120 ¾
¾ 0.1 ¾
¾ 0.87 ¾
(Note)
¾
¾
0.7 0.9
0.5 ¾
¾ 0.8 ¾
mA
mA
V
V
V
pF
pF
pF
1 2003-03-19

قانون اساسیصفحه 5
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