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C3072 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SC3072

شماره قطعه C3072
شرح مفصل 2SC3072
تولید کننده Toshiba 
آرم Toshiba 


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C3072 شرح
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3072
Strobe Flash Applications
Medium Power Amplifier Applications
2SC3072
Unit: mm
· High DC current gain
: hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A)
· Low collector saturation voltage
: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
· High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
(Note 1)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
50
40
20
8
5
8
0.5
1.0
10
150
55 to 150
V
V
V
A
A
W
°C
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2002-07-23

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