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C3076 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SC3076

شماره قطعه C3076
شرح مفصل 2SC3076
تولید کننده Toshiba 
آرم Toshiba 


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C3076 شرح
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications
Power Switching Applications
2SC3076
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
Excellent switching time: tstg = 1.0 μs (typ.)
Complementary to 2SA1241
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
50
5
2
1
1.0
10
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05

قانون اساسیصفحه 5
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