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Toshiba - NPN Transistor - 2SC3437

Numéro de référence C3437
Description NPN Transistor - 2SC3437
Fabricant Toshiba 
Logo Toshiba 





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C3437 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3437
Ultra High Speed Switching Applications
Computer, Counter Applications
2SC3437
Unit: mm
High transition frequency: fT = 400 MHz (typ.)
Low saturation voltage: VCE (sat) = 0.3 V (max)
High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
VCEO 15 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 200 mA
Base current
IB 40 mA
Collector power dissipation
PC 150 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55~125
°C
JEDEC
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01

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