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Sanyo - NPN Transistor - 2SC3820

Numéro de référence C3820
Description NPN Transistor - 2SC3820
Fabricant Sanyo 
Logo Sanyo 





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C3820 fiche technique
Ordering number:EN2544B
NPN Epitaxial Planar Type Silicon Transistor
2SC3820
High hFE, AF Amplifier Applications
Applications
· Drivers, muting circuits.
Features
· Adoption of FBET and MBIT processes.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(VCE(sat)0.5V).
· High VEBO (VEBO15V).
· Small Cob (Cob=2.0pF typ).
Package Dimensions
unit:mm
2033
[2SC3820]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=40V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
IC=50mA, IB=1mA
IC=50mA, IB=1mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
B : Base
C : Collector
E : Emitter
SANYO : SPA
Ratings
60
50
15
100
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
800 1500
200
2.0
0.1
0.8
60
50
15
max
0.1
0.1
3200
0.5
1.1
Unit
µA
µA
MHz
pF
mV
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/8270MH/4269MO/4207TA, TS No.2544–1/3

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