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Numéro de référence | C3964 | ||
Description | NPN Transistor - 2SC3964 | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
2SC3964
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3964
Switching Applications
Solenoid Drive Applications
Temperature Compensated for Audio Amplifier Output
Stage
Industrial Applications
Unit: mm
• High DC current gain: hFE = 500 (min) (IC = 400 mA)
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
40
40
7
2
0.5
1.5
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 40 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 400 mA
IC = 300 mA, IB = 1 mA
IC = 300 mA, IB = 1 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IB = 0, f = 1 MHz
Min Typ. Max Unit
― ― 10 µA
― ― 1 µA
40 ― ―
V
500 ―
―
― 0.3 0.5
V
― ― 1.1 V
― 220 ― MHz
― 20 ― pF
Turn-on time
Switching time Storage time
Fall time
ton
20 µs
Input IB1
Output
―
1.0
―
tstg IB2
VCC = 30 V
tf
IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
― 3.0 ―
µs
― 1.2 ―
1 2004-07-26
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Pages | Pages 5 | ||
Télécharger | [ C3964 ] |
No | Description détaillée | Fabricant |
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