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Toshiba - NPN Transistor - 2SC4250

Numéro de référence C4250
Description NPN Transistor - 2SC4250
Fabricant Toshiba 
Logo Toshiba 





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C4250 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4250
2SC4250
TV VHF Mixer Applications
Unit: mm
· High conversion gain: Gce = 25dB (typ.)
· Low reverse transfer capacitance: Cre = 0.45 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
20
3
50
25
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Conversion gain
Noise figure
Symbol
Test Condition
Min
ICBO
IEBO
V (BR) CEO
hFE
Cre
fT
Gce
NF
VCB = 25 V, IE = 0
VEB = 3 V, IC = 0
IC = 1 mA, IB = 0
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 5 mA
VCC = 12 V, f = 200 MHz, fL = 260 MHz
(Figure 1)
¾
¾
20
40
¾
900
20
¾
Typ. Max
¾
¾
¾
150
0.45
1400
25
4.3
100
1000
¾
300
0.6
¾
¾
6
Unit
nA
nA
V
pF
MHz
dB
dB
1 2003-03-19

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