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C5090 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SC5090

شماره قطعه C5090
شرح مفصل 2SC5090
تولید کننده Toshiba 
آرم Toshiba 


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C5090 شرح
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5090
2SC5090
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
10
1.5
20
40
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz
10 13 ¾
dB
¾7¾
¾ 1.1 2.5
dB
¾ 1.7 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 20 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
¾
¾
50
¾
¾
¾ 1 mA
¾ 1 mA
¾ 160
0.7 ¾ pF
0.5 0.95 pF
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19

قانون اساسیصفحه 7
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