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C5066 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SC5066

شماره قطعه C5066
شرح مفصل 2SC5066
تولید کننده Toshiba 
آرم Toshiba 


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C5066 شرح
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5066
2SC5066
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
12
3
15
30
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
SC-70
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA, f = 500 MHz
VCE = 5 V, IC = 10 mA, f = 1 GHz
VCE = 5 V, IC = 3 mA, f = 500 MHz
VCE = 5 V, IC = 3 mA, f = 1 GHz
Min Typ. Max Unit
5 7 ¾ GHz
¾ 17 ¾
dB
8.5 12
¾
¾1¾
dB
¾ 1.1 2.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 10 mA
Cob VCB = 5 V, IE = 0, f = 1 MHz
Cre
(Note 2)
¾
¾
80
¾
¾
¾1
¾1
¾ 240
0.7
0.45
¾
0.9
mA
mA
pF
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19

قانون اساسیصفحه 7
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