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PDF AP22800 Data sheet ( Hoja de datos )

Número de pieza AP22800
Descripción 5V SINGLE CHANNEL PROGRAMMABLE LOAD SWITCH
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No Preview Available ! AP22800 Hoja de datos, Descripción, Manual

AP22800
5V SINGLE CHANNEL PROGRAMMABLE LOAD SWITCH
Description
The AP22800 is an integrated N-channel load switch, which features
an adjustable ramp-up and discharge rate that are settable via an
external capacitor and a resistor, respectively. In addition, it
incorporates a ‘power good’ output to flag when the switch is
enhanced. The N-channel MOSFET has a typical RDS(ON) of 16mΩ,
enabling current handling capability of up to 4A.
The AP22800 is designed to operate from 1.5V to 5.5V making it ideal
for 1.8V, 2.5V, 3.3V, 5V voltage rails. The low quiescent supply
current specification of 21µA makes it ideal for use in battery powered
distribution systems where power consumption is a concern.
The AP22800 is available in a standard Green U-DFN2116-8
package with an exposed PAD for improved thermal performance and
is RoHS compliant.
Features
1.5V to 5.5V Input Range
Low Typical RDS(ON) of 16mΩ
Very Low Quiescent Current of 21µA
Adjustable Start-Up and Discharge Rate
Small Form Factor Package U-DFN2116-8
Footprint of just 3.36mm2
Thermally Efficient Low Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Pin Assignments
Top View
Bottom View
VIN 1
VIN 2
EN 3
SS 4
GND
8 VOUT 8
7 VOUT 7
6 DIS 6
5 PG 5
U-DFN2116-8
GND
1 VIN
2 VIN
3 EN
4 SS
Applications
Integrated Load Switches in Ultrabook PCs
Power Up/Down Sequencing in Ultrabook PCs
Tablets
SSD (Solid State Drives)
Consumer Electronics
Telecom Systems
Set-top Boxes
E-Readers
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Typical Applications Circuit
CIN
CSS
ON
OFF
VIN VOUT
RDIS
SS AP22800 DIS
CL
RPG
RL
EN PG
GND
AP22800
Document number: DS36046 Rev. 3 - 2
1 of 14
www.diodes.com
January 2015
© Diodes Incorporated

1 page




AP22800 pdf
AP22800
Electrical Characteristics (Cont. @ TA = +25°C, CIN = 1µF, CL = 100nF, unless otherwise specified.)
Symbol
IIN_Q
IIN_SD
RDS(ON)
VIH_EN
VIL_EN
ILEAK_EN
RDS_DIS
VOL_PG
IOZ_PG
tRISE
tON
tFALL
tOFF
tD
tPG
Parameters
Input Quiescent Current
Input Shutdown Current
Load Switch On-Resistance
EN Input Logic High Voltage
EN Input Logic Low Voltage
EN Input Leakage
Discharge FET On-Resistance
Power Good Output Low Level
Power Good High-Impedance Current
Output Rise Time
Output Turn-ON Delay Time
Output Fall Time
Output Turn-OFF Delay Time
Output Start Delay Time
Power Good Delay Time
VIN = 2.5V
Conditions
VEN = VIN, IOUT = 0A
VEN = 0V, IOUT = 0A, RDIS = 240Ω
VEN = VIN, IOUT = 1A
VEN = VIN
VEN = 0V, IDIS = 10mA
IOL_PG = 100µA, VEN = 0V
VPG = VIN, VEN = VIN
RL = 10, CSS = 10nF
RL = 10, CSS = 10nF
RL = Open, RDIS = 240Ω, CSS = 10nF
RL = Open, RDIS = 240Ω, CSS = 10nF
RL = 10, CSS = 10nF (Note 7)
RL = 10, CSS = 10nF
Min Typ Max Unit
11 19 µA
0.04 0.2 µA
19 24
1.0 – – V
– – 0.5 V
– – 0.1 µA
6 9Ω
– – 0.2 V
– – 0.05 µA
125
µs
95 µs
56 µs
21 µs
30 µs
310
µs
Symbol
Parameters
IIN_Q
IIN_SD
RDS(ON)
VIH_EN
VIL_EN
ILEAK_EN
Input Quiescent Current
Input Shutdown Current
Load Switch On-Resistance
EN Input Logic High Voltage
EN Input Logic Low Voltage
EN Input Leakage
RDS_DIS
VOL_PG
IOZ_PG
tRISE
tON
Discharge FET On-Resistance
Power Good Output Low Level
Power Good High-Impedance Current
Output Rise Time
Output Turn-ON Delay Time
tFALL
Output Fall Time
tOFF Output Turn-OFF Delay Time
tD Output Start Delay Time
tPG Power Good Delay Time
Note:
7. Guaranteed by design
AP22800
Document number: DS36046 Rev. 3 - 2
VIN = 1.8V
Conditions
VEN = VIN, IOUT = 0A
VEN = 0V, IOUT = 0A, RDIS = 240Ω
VEN = VIN, IOUT = 1A
VEN = VIN
VEN = 0V, IDIS = 10mA
IOL_PG = 100µA, VEN = 0V
VPG = VIN, VEN = VIN
RL = 10, CSS = 10nF
RL = 10, CSS = 10nF
RL = Open, RDIS = 240Ω, CSS = 10nF
RL = Open, RDIS = 240Ω, CSS = 10nF
RL = 10, CSS = 10nF (Note 7)
RL = 10, CSS = 10nF
5 of 14
www.diodes.com
Min Typ Max Unit
9 16 µA
0.03 0.2 µA
22 28
0.9 – – V
– – 0.4 V
– – 0.1 µA
8 12 Ω
– – 0.2 V
– – 0.05 µA
130
µs
100
µs
56 µs
21 µs
40 µs
300
µs
January 2015
© Diodes Incorporated

5 Page





AP22800 arduino
AP22800
Board Layout and Thermal Considerations
Due to the high current capacity of the load switch, PCB layout needs to ensure good thermal distribution during operation. The top and bottom of
AP22800EV1, the evaluation board for the AP22800, can be seen below.
Figure 1. PCB Copper Layout & Silk Screen Top
Figure 2. PCB Copper Layout & Silk Screen Bottom
Thermal vias are used directly underneath the chip to help distribute the heat from the device. The ground plane on the underside of the board
effectively acts as a large heatsink. The widths of the tracks carrying VIN and VOUT are kept wide. Vias are also distributed around the board to
aid thermal conduction and to ensure a consistent potential, particularly around the ground connections of the capacitors. All capacitors used are
located as close as possible to the AP22800 to minimize any parasitic effects.
The maximum junction temperature of the AP22800 is +125°C. To ensure that this is not exceeded, the following equation can be used to give an
approximation of junction temperature. Temperature readings taken with a thermal camera can also give a good approximation of power
dissipation with the use of this equation. The board layout has a major influence on the parameter .
where,
= Junction temperature (°C)
= Ambient temperature (°C)
= Junction to ambient thermal impedance (°C/W)
= Power dissipation (voltage drop across device output current) (W)
AP22800
Document number: DS36046 Rev. 3 - 2
11 of 14
www.diodes.com
January 2015
© Diodes Incorporated

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